The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Aug. 02, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Jianquan Jia, Hubei, CN;
Kaikai You, Hubei, CN;
Xinlei Jia, Hubei, CN;
Wen Zhou, Hubei, CN;
Kun Yang, Hubei, CN;
Jiayin Han, Hubei, CN;
Pan Xu, Hubei, CN;
Zhe Luo, Hubei, CN;
Da Li, Hubei, CN;
Lei Jin, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
The present disclosure provides systems, methods and media of optimization of temporary read errors (TRE) in three-dimensional (3D) NAND memory devices. The (3D) NAND memory devices comprises a plurality of memory cells arranged as an array of NAND memory strings, a plurality of word lines couple to the memory cells, and a controller. The controller is configured to determine whether a next read operation is a first read operation of the memory device after recovering from an idle state, and in response to a positive result of the determination, control the memory device to perform an extended pre-phase of the first read operation before a read-phase of the first read operation.