Wen Zhou

Title: Wen Zhou: Innovator in 3D NAND Memory Technology

Introduction

Wen Zhou is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in optimizing 3D NAND memory devices. With a total of 2 patents, his work focuses on enhancing the performance and reliability of non-volatile memory systems.

Latest Patents

Wen Zhou's latest patents include innovative systems and methods aimed at addressing temporary read errors in 3D NAND memory devices. One of his patents describes a method for optimizing temporary read errors (TRE) in these devices. The technology involves a controller that determines if a read operation is the first after recovering from an idle state, allowing for an extended pre-phase before the read-phase. Another patent focuses on filtering write request sequences to improve the efficiency of solid-state devices. This technology detects whether a write request is part of a non-volatile write request sequence, ensuring that data is managed effectively between cache and non-volatile memory.

Career Highlights

Wen Zhou has worked with prominent institutions, including Hua Zhong University of Technology and Yangtze Memory Technologies Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Wen has collaborated with notable colleagues, including Dan Feng and Jingning Liu, who have contributed to his research and development efforts in the field.

Conclusion

Wen Zhou's contributions to 3D NAND memory technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of memory systems and their optimization, positioning him as a key figure in the advancement of non-volatile memory technology.