Company Filing History:
Years Active: 2024
Title: **Jiayin Han: Innovating 3D NAND Memory Technology**
Introduction
Jiayin Han is a prominent inventor based in Hubei, China, recognized for her contributions to the field of memory technology. With a patent to her name, Han has made significant strides in optimizing memory devices, specifically focusing on three-dimensional (3D) NAND memory systems.
Latest Patents
Jiayin Han holds a patent titled "Systems, methods and media of optimization of temporary read errors in 3D NAND memory devices." This invention provides innovative systems, methods, and media designed to optimize temporary read errors (TRE) in 3D NAND memory devices. The technology involves a sophisticated array of memory cells organized into NAND memory strings and a controller that enhances the read operations following an idle state.
Career Highlights
Han's career includes her vital role at Yangtze Memory Technologies Co., Ltd., where she has been able to apply her expertise in memory technology and contribute to advancements in the industry. Her patent showcases her deep understanding of memory systems, positioning her as a leading figure in this cutting-edge field.
Collaborations
Throughout her career, Jiayin Han has collaborated with notable colleagues, including Jianquan Jia and Kaikai You. These collaborations have allowed her to exchange ideas and drive forward the development of innovative solutions in memory technology.
Conclusion
With her dedication to improving NAND memory devices, Jiayin Han exemplifies the spirit of innovation in the tech industry. Her patent illustrates not only her technical prowess but also her significant contribution to enhancing modern memory storage solutions. As she continues her work at Yangtze Memory Technologies Co., Ltd., the impact of her innovations will likely resonate throughout the field for years to come.