The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Sep. 04, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Qiang Tang, Wuhan, CN;
Sangoh Lim, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In certain aspects, a memory device includes an array of memory cells, an input/output (I/O) circuit, and I/O control logic coupled to the I/O circuit. The array of memory cells includes a first-level memory unit which includes a plurality of second-level memory units. Each second-level memory unit includes N main banks and a redundant bank, where N is a positive integer. The I/O circuit is configured to direct N pieces of data to or from N working banks in a corresponding second-level memory unit. The I/O control logic is configured to determine the N working banks from the N main banks and the redundant bank in the corresponding second-level memory unit based on bank fail information indicative of a failed main bank of the N main banks and control the I/O circuit to direct the N pieces of data to or from the N working banks, respectively.