The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Sep. 10, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventor:

Qiang Tang, Hubei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); G11C 8/14 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
G11C 8/14 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, the 3D memory device includes a film stack having a plurality of conductive and dielectric layer pairs vertically stacked on a substrate. Each conductive and dielectric layer pair includes a dielectric layer and a conductive layer. The 3D memory device also includes a staircase region having a first and a second staircase structure formed in the film stack, where the first and second staircase structures each extends laterally in a first direction and includes the plurality of conductive and dielectric layer pairs. The staircase region further includes a staircase bridge connecting the first and second staircase structures.


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