The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Jun. 01, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Qiang Tang, Wuhan, CN;
Chunyuan Hou, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); H01L 27/2454 (2013.01);
Abstract
A memory device includes a first substrate, a first memory array, a second substrate, and at least one first vertical transistor. The first memory array is disposed on the first substrate. The first memory array includes at least one first word line structure. The first memory array is disposed between the first substrate and the second substrate in a vertical direction. The first vertical transistor is electrically connected with the first word line structure. At least a part of the at least one first vertical transistor is disposed in the second substrate.