The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Jul. 23, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ke Liang, Wuhan, CN;

Yueping Li, Wuhan, CN;

Chunyuan Hou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01);
Abstract

In certain aspects, a memory device includes a memory cell array having rows of memory cells, word lines respectively coupled to the rows of memory cells, and a peripheral circuit coupled to the memory cell array through the word lines. The peripheral circuit is configured to program a row of memory cells using a first program voltage and verify the programmed row of memory cells using a verify voltage and a sample voltage smaller than the verify voltage. The peripheral circuit is also configured to obtain a first number of memory cells of the programmed row of memory cells based on the sample voltage. The peripheral circuit is further configured to predict, based on the first number of memory cells and the sample voltage, a second number of memory cells of the programmed row of memory cells that fail to pass the verification.


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