Company Filing History:
Years Active: 2024
Title: Miao Shen: Innovator in Vertical Memory Devices
Introduction
Miao Shen is a prominent inventor based in Wuhan, China, known for his innovative work in the field of semiconductor technology. With a focus on developing advanced memory devices, Shen has made significant contributions that enhance the efficiency and functionality of electronic devices.
Latest Patents
One of Miao Shen's notable patents centers around vertical memory devices. This patent outlines a method for fabricating semiconductor devices, detailing a process that involves characterizing an etch technique used to create channel holes and dummy channel holes within a stack of alternating sacrificial gate layers and insulating layers on a semiconductor substrate. Specifically, the patent describes the creation of these channel holes in both core and staircase regions of the device, with a unique approach to defining their shapes based on the etch process characterization. This innovation is crucial for improving the performance of memory devices.
Career Highlights
Miao Shen currently works at Yangtze Memory Technologies Co., Ltd., where he has been instrumental in advancing the company’s semiconductor technologies. His expertise in etching processes and semiconductor fabrication has positioned him as a key player in developing efficient memory solutions.
Collaborations
Shen has collaborated with other talented professionals in his field, including Li Hong Xiao and Yushi Hu. These partnerships have facilitated a rich exchange of ideas and have led to innovative solutions that push the boundaries of current technologies in semiconductor design and manufacturing.
Conclusion
Miao Shen's contributions to the field of semiconductor technology, particularly through his patent on vertical memory devices, highlight the importance of innovation in enhancing the capabilities of electronic devices. As he continues to work at Yangtze Memory Technologies Co., Ltd., his efforts will undoubtedly pave the way for future advancements in memory technologies.