The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Aug. 06, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventors:
Li Hong Xiao, Hubei, CN;
Jun Liu, Hubei, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/823462 (2013.01); H01L 21/823487 (2013.01);
Abstract
A method for forming a gate structure of a 3D memory device is provided. The method comprises: forming an alternating layer stack on a substrate; forming a plurality of channel holes in the alternating layer stack, each penetrating vertically through the alternating layer stack; forming a functional layer including a storage layer on a sidewall of each channel hole, wherein the storage layer has an uneven surface; forming a channel layer to cover the functional layer in each channel hole; and forming a filling structure to cover the channel layer and fill each channel hole.