The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Sep. 20, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Tianyi Ye, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/04 (2013.01); G11C 7/1069 (2013.01); G11C 7/222 (2013.01);
Abstract

According to one aspect of the present disclosure, a method of voltage calibration is provided. The method may include detecting a target temperature of a memory cell array. The method may include performing a read operation on the memory cell array at each of multiple candidate times with a standard read voltage. The method may include obtaining a number of target read fail bits. Each of the candidate times may correspond to one of the number of the target read fail bits. The method may include determining a target read voltage offset parameter according to the target temperature, the number of the target read fail bits, the candidate time, and a stored target offset function. The method may include calibrating the read voltage of the read operation on the memory cell array with the target read voltage offset parameter.


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