The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Aug. 16, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yangtze Memory Technlogies Co., Ltd., Wuhan, CN;
Abstract
The present disclosure provides a fabrication method to produce a semiconductor structure with increased reliability for use in NAND memory devices. The method can include forming a layered semiconductor structure that includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The method can also include forming a channel structure, which can include etching the first layer, the second layer, and the third layer to form an opening through a surface of the semiconductor structure. A portion of the third layer can be exposed at the opening. The forming of the channel structure also include oxidizing the exposed portion of the third layer to form silicon oxide expand the exposed portion of the third layer.