The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Apr. 12, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Wenwen Dong, Wuhan, CN;

Yahai Liu, Wuhan, CN;

Lu Guo, Wuhan, CN;

Wei Huang, Wuhan, CN;

Weijun Wan, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01);
Abstract

The present disclosure provides a memory device and an operation method thereof, a memory system and an operation method thereof, and an electronic apparatus. The memory device includes a memory array and a peripheral circuit coupled with the memory array; the peripheral circuit is configured to: in response to a characteristic parameter setting command, receive a characteristic parameter of an erased page checking operation, wherein the characteristic parameter of the erased page checking operation includes at least a read voltage compensation parameter of the erased page checking operation; and in response to an erased page checking command, perform the erased page checking operation on the memory array based on the characteristic parameter of the erased page checking operation.


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