Hubei, China

Jifeng Zhu

This inventor holds 44 USPTO granted patents and 13 published patent applications and 4 EPO patents, primarily in Three-Dimensional Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jifeng Zhu. Retrieved from https://idiyas.com/inventor/jifeng-zhu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 158(Granted Patents)


Location History:

  • Hubei, CN (2016 - 2024)
  • Wuhan, CN (2019 - 2024)

Company Filing History:


Years Active: 2016-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Three-Dimensional Memory
Memory Cell Structure
Hybrid Bonding
NAND Strings
Fabrication Methods
Integrated Wiring
Lead Wires
Semiconductor Structures
Staircase Structure
Bonded Structures
Dummy Bonding Contacts
Channel Hole Structure
44 patents (USPTO):Explore Patents

Jifeng Zhu, an innovative inventor hailing from Hubei, China, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 37 patents, Zhu has played a pivotal role in shaping the industry. His latest patents include advancements in three-dimensional memory devices and methods for forming lead wires in hybrid-bonded semiconductor devices.

One of Zhu's notable inventions involves three-dimensional memory devices. These devices consist of multiple NAND strings placed between a substrate and a single crystalline silicon layer. The invention introduces a novel source structure for these 3D memory devices, ensuring efficient data storage and retrieval. The source structure utilizes a source conductor layer, which connects the NAND string to the source contact. The source conductor layer comprises conduction regions composed of metals, metal alloys, and metal silicide. This breakthrough innovation in memory technology showcases Zhu's expertise and vision.

In addition to his work on memory devices, Zhu has also focused on hybrid-bonded semiconductor structures. He has developed methods to fabricate these structures, optimizing their performance. By employing multiple steps, including etching and depositing conductive material, Zhu's techniques enable enhanced conductivity and reliability in hybrid-bonded semiconductor devices. This invention paves the way for more efficient and stable electrical connections within these devices.

Zhu has worked with esteemed companies in the semiconductor industry, including Yangtze Memory Technologies Co., Ltd. and Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. These collaborations demonstrate his dedication to driving innovation in the field. During his tenure, he has worked closely with esteemed colleagues such as Jun Chen and Zhenyu Lu, further bolstering his expertise and fostering a culture of collaboration.

Jifeng Zhu's groundbreaking inventions and extensive experience have undoubtedly propelled the field of semiconductor technology forward. His contributions to three-dimensional memory devices and hybrid-bonded semiconductor structures exemplify his commitment to advancing the industry. As a talented and prolific inventor, Zhu continues to make significant contributions to the intellectual property landscape, serving as an inspiration to fellow innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…