Yu-Hsiang Lin

This inventor holds 83 USPTO granted patents and 35 published patent applications, plus 1 CIPO patent and 4 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: United Microelectronics Corp., Institute for Information Industry, Industrial Technology Research Institute. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Hsiang Lin. Retrieved from https://idiyas.com/inventor/yu-hsiang-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 83 (Patent Applications = 35)

% Patents Active = 94.0

CIPO Patents = 1

EPO Patents = 4 (Patent Applications = 4)

Average Co-Inventor Count = 4.7

ph-index = 6

Forward Citations = 141(Granted Patents)

Forward Citations (Not Self Cited) = 104(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Taoyuan County, TW (2011 - 2013)
Kuei-Shan Hsiang, TW (2012 - 2015)
New Taipei, TW (2015 - 2024)
Kaohsiung, TW (2023 - 2024)

Company Filing History:

69 out of 7,278

United Microelectronics Corp.

patents

9 out of 638

Institute for Information Industry

patents

1 out of 9,307

Industrial Technology Research Institute

5. 3 out of 834,513

Other

patents

Years Active: 2011-2026

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Areas of Expertise:

Semiconductor Device

High-Voltage Transistor

Fabrication Method

Gate Oxide Layer

N-Type Metal Oxide

Bonded Structure

3D Stacking

Concave/Convex Profile

Integrated Devices

Thermal Management

Transistor Structure

Recyclable Polymer

83 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12765074 - Semiconductor device and method for fabricating the same (2026-10-13),

2. 12727193 - FinFET LDMOS device (2026-09-01),

3. 12684831 - Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features (2026-07-14),

4. 12672307 - FinFET device with extra body portion and method of forming the same (2026-06-30),

5. 12635231 - Integrated low-voltage finFETs and high-voltage planar transistors (2026-05-19),

6. 12628567 - Method for fabricating semiconductor device (2026-05-12),

7. 12628387 - Semiconductor device and method for fabricating the same (2026-05-12),

8. 12610590 - Semiconductor device and method for fabricating the same (2026-04-21),

9. 12550386 - N-type metal oxide semiconductor transistor and method for fabricating the same (2026-02-10),

10. 12527080 - Integrated high, medium, and low voltage semiconductor devices and method for fabricating the same (2026-01-13),

11. 12525596 - Semiconductor device and method for fabricating the same (2026-01-13),

12. 12342599 - Manufacturing method of semiconductor device including gate oxide layer (2025-06-24),

13. 12328898 - High voltage semiconductor device including buried oxide layer (2025-06-10),

14. 12272693 - Semiconductor device and method for fabricating the same (2025-04-08),

15. 12262555 - Semiconductor device and method of fabricating the same (2025-03-25),

Title: The Innovative Journey of Yu-Hsiang Lin

Introduction: Yu-Hsiang Lin, a talented inventor hailing from New Taipei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Lin's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we approach transportation technology.

Career Highlights: With a career spanning over two decades, Lin has worked tirelessly to push the boundaries of technological innovation. His work on renewable energy solutions has garnered international acclaim, showcasing his commitment to sustainability.

Collaborations: Lin has collaborated with leading research institutions and tech companies to bring his inventions to life. His partnerships have led to the development of state-of-the-art products that have reshaped industries.

Conclusion: Yu-Hsiang Lin's passion for innovation and dedication to creating a sustainable future through technology make him a true pioneer in the world of inventions. His relentless pursuit of excellence continues to inspire the next generation of inventors worldwide.

Profile summary based on public USPTO records.