The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Feb. 16, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Hung Tsai, Tainan, TW;
Chien-Ting Lin, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
Ssu-I Fu, Kaohsiung, TW;
Chih-Kai Hsu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of first providing a first substrate having a high-voltage (HV) region and a medium voltage (MV) region and a second substrate having a low-voltage (LV) region and a static random access memory (SRAM) region, in which the HV region includes a HV device, the MV region includes a MV device, the LV region includes a fin field-effect transistor (FinFET), and the SRAM region includes a SRAM device. Next, a bonding process is conducted by using hybrid bonding, through-silicon interposer (TSI) or redistribution layer (RDL) for bonding the first substrate and the second substrate.