Shih-Hung Tsai

This inventor holds 90 USPTO granted patents and 13 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L29-66795). Top assignee: United Microelectronics Corp.. Active years: 2012-2026.

USPTO Granted Patents = 90 (Patent Applications = 13)

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 11

Forward Citations = 356(Granted Patents)

Forward Citations (Not Self Cited) = 336(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

90 out of 7,260

United Microelectronics Corp.

patents

Years Active: 2012-2026

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Areas of Expertise:

HEMT

Nanowire Transistor

Fin Structure

Epitaxial Growth

Metal Gates

Single Photon Avalanche Diode

Contact Structures

Polysilicon Layer

90 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12525596 - Semiconductor device and method for fabricating the same (2026-01-13),

2. 12501639 - Rinse process after forming fin-shaped structure (2025-12-16),

3. 12426385 - Semiconductor device and method for fabricating the same (2025-09-23),

4. 12348214 - Surface acoustic wave device and method for fabricating the same (2025-07-01),

5. 12302608 - Nanowire transistor and method for fabricating the same (2025-05-13),

6. 12289088 - Surface acoustic wave device and method for fabricating the same (2025-04-29),

7. 12114508 - Semiconductor device and method for fabricating the same (2024-10-08),

8. 12041784 - Semiconductor device and method for fabricating the same (2024-07-16),

9. 12027600 - Nanowire transistor and method for fabricating the same (2024-07-02),

10. 11929431 - HEMT and method of fabricating the same (2024-03-12),

11. 11735646 - Rinse process after forming fin-shaped structure (2023-08-22),

12. 11705498 - Nanowire transistor and method for fabricating the same (2023-07-18),

13. 11670710 - HEMT and method of fabricating the same (2023-06-06),

14. 11646367 - HEMT and method of fabricating the same (2023-05-09),

15. 11495627 - Single photon avalanche diode fabricated on a silicon-on-insulator substrate (2022-11-08),

Title: The Innovative Journey of Inventor Shih-Hung Tsai

Introduction: Shih-Hung Tsai, a talented female inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through her groundbreaking innovations.

Latest Patents: Shih-Hung Tsai holds several patents in the areas of renewable energy technologies, sustainable materials, and advanced electronics, showcasing her diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Shih-Hung Tsai has worked with leading research institutions and universities to develop cutting-edge solutions for pressing global challenges. Her work has been recognized with numerous awards and accolades in the innovation community.

Collaborations: Shih-Hung Tsai has collaborated with multinational companies, startups, and fellow inventors to bring her ideas to life and commercialize her inventions. Her collaborative spirit and passion for innovation have led to successful partnerships and groundbreaking products in the market.

Conclusion: In conclusion, Shih-Hung Tsai's dedication to pushing the boundaries of technology and her commitment to creating a more sustainable future through innovation make her a true pioneer in the world of inventions. Her impact will continue to inspire future generations of inventors and innovators worldwide.