The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Sep. 30, 2021
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of forming a metal-oxide semiconductor (MOS) transistor on a substrate, forming an interlayer dielectric (ILD) layer on the MOS transistor, forming a ferroelectric field effect transistor (FeFET) on the ILD layer, and forming a ferroelectric random access memory (FeRAM) on the ILD layer. The formation of the FeFET further includes first forming a semiconductor layer on the ILD layer, forming a gate structure on the semiconductor layer, and then forming a source/drain region adjacent to the gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile