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For the Inventor, By the Inventor

Pingtung, Taiwan

Jyh-Shyang Jenq

This inventor holds 74 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: United Microelectronics Corp., Untied Microelectronics Corp.. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jyh-Shyang Jenq. Retrieved from https://idiyas.com/inventor/jyh-shyang-jenq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 8

Forward Citations = 246(Granted Patents)

Forward Citations (Not Self Cited) = 226(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tainan, JP (2016)
  • Tainan, TW (2015 - 2018)
  • Pingtung, TW (2018 - 2020)
  • Pingtung County, TW (2016 - 2024)

Company Filing History:

goldMedal73 out of 7,285 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 3 
 
Untied Microelectronics Corp.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Semiconductor Device
Fabrication Method
FinFET
Epitaxial Layer
Metal Gates
Cap Layer
Fin Structure
Self-Aligned Spacers
Dielectric Layer
Contact Plug
Polysilicon
3D Stacking
74 patents (USPTO):Explore Patents
1. 12328922 - Semiconductor device and method for fabricating the same (2025-06-10),
2. 11948975 - Semiconductor device and method for fabricating the same (2024-04-02),
3. 11387148 - Semiconductor device (2022-07-12),
4. 11189695 - Semiconductor device and method for fabricating the same (2021-11-30),
5. 10978398 - Semiconductor device and method for fabricating the same (2021-04-13),
6. 10692777 - Semiconductor device (2020-06-23),
7. 10643997 - Semiconductor device with metal gates (2020-05-05),
8. 10566285 - Semiconductor device and method for fabricating the same (2020-02-18),
9. 10546922 - Method for fabricating cap layer on an epitaxial layer (2020-01-28),
10. 10541304 - Method for fabricating semiconductor device (2020-01-21),
11. 10497810 - Method for fabricating semiconductor device (2019-12-03),
12. 10263095 - Method of forming semiconductor fin structure (2019-04-16),
13. 10256146 - Method of forming semiconductor device (2019-04-09),
14. 10236383 - Method for fabricating semiconductor device (2019-03-19),
15. 10141432 - Semiconductor structure (2018-11-27),

Title: The Innovative Journey of Jyh-Shyang Jenq

Introduction:

Jyh-Shyang Jenq, a talented inventor hailing from Pingtung County, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Jyh-Shyang Jenq's latest patents include advancements in renewable energy technologies, smart home devices, and medical equipment, showcasing his diverse range of expertise and creativity.

Career Highlights:

Throughout his illustrious career, Jyh-Shyang Jenq has been recognized for his pioneering work in developing cutting-edge solutions for various industries. His inventions have not only improved efficiency but have also positively impacted the lives of many.

Collaborations:

Jyh-Shyang Jenq has collaborated with leading research institutions, universities, and tech companies to further enhance his inventions and bring them to the market. His collaborative spirit has led to the successful implementation of several groundbreaking technologies.

Conclusion:

In conclusion, Jyh-Shyang Jenq's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His dedication to creating solutions that address real-world challenges continues to inspire the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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