The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 21, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Chih-Kai Hsu, Tainan, TW;
Yu-Hsiang Hung, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure; and using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, in which the third fin-shaped structure includes a first top portion and a first bottom portion and the fourth fin-shaped structure includes a second top portion and a second bottom portion.