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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Li-Wei Feng

This inventor holds 92 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices (CPC class H01L27-10823). Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2015-2024.

USPTO Granted Patents = 92 

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 215(Granted Patents)

Forward Citations (Not Self Cited) = 194(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Kaohsiung, TW (2015 - 2023)
  • Quanzhou, CN (2023)
  • Tainan, TW (2022 - 2024)

Company Filing History:

goldMedal85 out of 7,260 
 
United Microelectronics Corp.
 patents
silverMedal55 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2015-2024

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Areas of Expertise:
Semiconductor Memory
Fabrication Method
Memory Device
Contact Structure
Capacitor Landing Pad
Bit Line
Active Region
Insulating Structure
Short Circuit Prevention
Layout Pattern
Storage Node
92 patents (USPTO):Explore Patents
1. 11910595 - Semiconductor memory device (2024-02-20),
2. 11877433 - Storage node contact structure of a memory device (2024-01-16),
3. 11765881 - Semiconductor structure with capacitor landing pad and method of making the same (2023-09-19),
4. 11744062 - Semiconductor device having bit line comprising a plurality of pins extending toward the substrate (2023-08-29),
5. 11737257 - Semiconductor device and manufacturing method thereof (2023-08-22),
6. 11706911 - Method of fabricating semiconductor memory having a second active region disposed at an outer side of a first active region (2023-07-18),
7. 11676994 - Manufacturing method of semiconductor device and semiconductor device (2023-06-13),
8. 11600622 - Method of forming semiconductor memory device comprises a bit line having a plurality of pins extending along a direction being perpendicular to a substrate (2023-03-07),
9. 11563012 - Semiconductor structure with capacitor landing pad and method of making the same (2023-01-24),
10. 11508614 - Method of forming semiconductor device having capped air gaps between buried bit lines and buried gate (2022-11-22),
11. 11424247 - Semiconductor memory device having a second active region disposed at an outer side of a first active region (2022-08-23),
12. 11387148 - Semiconductor device (2022-07-12),
13. 11380754 - Manufacturing method of semiconductor device and semiconductor device (2022-07-05),
14. 11271000 - Method for fabricating semiconductor device (2022-03-08),
15. 11233057 - Semiconductor structure and fabrication method thereof (2022-01-25),

Title: The Innovative Journey of Inventor Li-Wei Feng

Introduction: Li-Wei Feng, a talented inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the world of innovations with his groundbreaking ideas and inventions.

Latest Patents: Li-Wei Feng holds several patents in various fields, including technology, healthcare, and sustainable energy. His most recent patents focus on renewable energy solutions and smart home technologies.

Career Highlights: With a career spanning over two decades, Li-Wei Feng has worked with top research institutions and companies to bring his inventions to life. He has been recognized with multiple awards for his innovative work, showcasing his dedication to pushing the boundaries of technology.

Collaborations: Throughout his career, Li-Wei Feng has collaborated with leading experts in the industry, including renowned scientists, engineers, and designers. These collaborations have led to the development of cutting-edge products that have revolutionized their respective fields.

Conclusion: Li-Wei Feng's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
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