The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

May. 19, 2021
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Li-Wei Feng, Tainan, TW;

Shih-Fang Tzou, Tainan, TW;

Chien-Ting Ho, Taichung, TW;

Ying-Chiao Wang, Changhua County, TW;

Yu-Ching Chen, Kaohsiung, TW;

Hui-Ling Chuang, Changhua County, TW;

Kuei-Hsuan Yu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01);
Abstract

A semiconductor structure with a capacitor landing pad includes a substrate. A capacitor contact plug is disposed on the substrate. A capacitor landing pad contacts and electrically connects the capacitor contact plug. A bit line is disposed on the substrate. A dielectric layer surrounds the capacitor landing pad. The dielectric layer includes a bottom surface lower than a top surface of the bit line.


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