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Quanzhou, China

Fujian Jinhua Integrated Circuit Co., Ltd.

USPTO Granted Patents = 353

Trademarks = 1

Forward Citations = 352

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223 inventors (with patents filed for the assignee):

Fu-Che Lee (100 out of 103 patents)

Feng-Yi Chang (89 out of 137 patents)

Li-Wei Feng (55 out of 92 patents)

4. Yu-Cheng Tung (45 out of 176 patents)

5. Shih-Fang Tzou (44 out of 77 patents)

6. Yi-Wei Chen (43 out of 156 patents)

7. Chien-Ting Ho (34 out of 35 patents)

8. Ying-Chiao Wang (31 out of 34 patents)

9. Janbo Zhang (30 out of 30 patents)

10. Chieh-Te Chen (28 out of 61 patents)

11. Yu-Cheng Tung (28 out of 28 patents)

12. Tsun-Min Cheng (27 out of 42 patents)

13. Chih-Chieh Tsai (26 out of 27 patents)

14. Pin-Hong Chen (24 out of 32 patents)

15. Yukihiro Nagai (21 out of 22 patents)

Core Competencies:

Semiconductor Structure

Memory Device

Dynamic Random Access Memory

Fabrication Method

Three-Dimensional Memory

Bit Line Contact

Dielectric Insert Structure

Shallow Trench Isolation

Transistor Technology

Capacitor Structure

Input Data Pre-Alignment Circuit

Buried Word Line

353 patents: Sort by Forward Citations

1. 12513891 - Semiconductor device and method of fabricating the same (2025-12-30),

2. 12513888 - Memory device and manufacturing method thereof (2025-12-30),

3. 12495554 - Three-dimensional memory device and method for fabricating the same (2025-12-09),

4. 12495545 - Semiconductor memory device and method of fabricating the same (2025-12-09),

5. 12494231 - Semiconductor device and method of fabricating the same (2025-12-09),

6. 12484210 - Semiconductor structure and method for forming the same (2025-11-25),

7. 12477753 - Semiconductor device and fabricating method thereof (2025-11-18),

8. 12477722 - Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate (2025-11-18),

9. 12444455 - Memory structure (2025-10-14),

10. 12426242 - Semiconductor memory device having a bit line contact disposed in the substrate (2025-09-23),

11. 12419039 - Semiconductor memory device (2025-09-16),

12. 12408331 - Memory device and manufacturing method thereof (2025-09-02),

13. 12408328 - Semiconductor device and method of fabricating the same (2025-09-02),

14. 12400958 - Method for forming semiconductor device having an air gap between a contact pad and a sidewall of contact hole (2025-08-26),

15. 12396152 - Semiconductor structure and method for forming the same (2025-08-19),

Fujian Jinhua Integrated Circuit Co., Ltd. is a leading Chinese semiconductor manufacturing company. Established in 2016, the company focuses on the research, development, and production of integrated circuits for various industries. With advanced technology and a strong team of professionals, Fujian Jinhua IC is committed to providing high-quality semiconductor products that contribute to technological advancements and innovation.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Jan 6 2026

353 Patents

#1 in Quanzhou

#100 in China

#2,515 in the World

Quanzhou, China

Fujian Jinhua Integrated Circuit Co., Ltd.

Forward Citations = 352

223 inventors:

Fu-Che Lee (100 out of 103 patents)

Feng-Yi Chang (89 out of 137 patents)

Li-Wei Feng (55 out of 92 patents)

4. Yu-Cheng Tung (45 out of 176 patents)

5. Shih-Fang Tzou (44 out of 77 patents)

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