The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

May. 11, 2023
Applicant:

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Yifei Yan, Quanzhou, CN;

Huixian Lai, Quanzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); H01L 21/76224 (2013.01); H10B 12/09 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/50 (2023.02); H10B 12/315 (2023.02);
Abstract

The present disclosure relates to a semiconductor device and a fabricating method thereof, which includes a substrate and a plurality of word lines. The substrate includes a shallow trench isolation and an active structure defined by the shallow trench isolation and the active structure includes a first active area and a second active area. The first active area includes a plurality of active area units being parallel extended along a first direction, and the second active area is disposed outside a periphery of the first active area, to surround all of the active area units. The word lines are disposed in the substrate to intersect the active area units and the shallow trench isolation. The word lines includes first word lines arranged by a first pitch and at least one second word line arranged by a second pitch, and the second pitch is greater than the first pitch.


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