The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Dec. 19, 2022
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Yukihiro Nagai, Quanzhou, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
The present disclosure provides a semiconductor memory device and a fabricating method thereof, which includes a substrate, a bit line structure and a resistor structure. The substrate has a plurality of active areas and an isolating region. The resistor structure includes a first semiconductor layer and a first capping layer from bottom to top. The bit line structure includes a second semiconductor layer, a first conductive layer, and a second capping layer from bottom to top, wherein the first semiconductor layer and the second semiconductor layer include coplanar top surface and a same semiconductor material. In this way, the resistor formed thereby is allowable to obtain structural reliability and stable surface resistance, under a simplified process flow.