The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Apr. 13, 2022
Applicant:

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Xiaopei Fang, Quanzhou, CN;

Gang-Yi Lin, Quanzhou, CN;

Congcong Wang, Quanzhou, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/02 (2023.02); H01L 23/5283 (2013.01); H10B 12/30 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and an interconnection structure on the second dielectric layer. The interconnection structure includes at least two lateral extending portions on the second dielectric layer, and a U-shaped portion through the second dielectric layer and a portion of the first dielectric layer and connected between adjacent ends of the two lateral extending portions.


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