The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
May. 24, 2023
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Yu-Cheng Tung, Quanzhou, CN;
Janbo Zhang, Quanzhou, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device includes a substrate, a capacitor structure, a sidewall high-k dielectric layer and a supporting structure. The capacitor structure is disposed on the substrate, and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer and a top electrode layer, wherein each of the columnar bottom electrodes includes a recess on the top. The sidewall high-k dielectric layer is disposed on two opposite sidewalls of each of the columnar bottom electrodes, wherein a portion of the capacitor dielectric layer is filled in the recess and sandwiched between the columnar bottom electrodes and the sidewalls high-k dielectric layer. The supporting structure is disposed between the adjacent ones of the columnar bottom electrodes, and includes a first supporting layer and a second supporting layer stacked from bottom to top.