IDiyas

For the Inventor, By the Inventor

Zhangzhou, China

Janbo Zhang

USPTO Granted Patents = 29 

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Quanzhou, CN (2023)
  • Zhangzhou, CN (2022 - 2024)

Company Filing History:

goldMedal29 out of 348 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents

Years Active: 2022-2025

Loading Chart...
29 patents (USPTO):Explore Patents
1. 12477753 - Semiconductor device and fabricating method thereof (2025-11-18),
2. 12477722 - Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate (2025-11-18),
3. 12394714 - Semiconductor device including dielectric insert structure directly under buried word line and method for forming the same (2025-08-19),
4. 12389617 - Semiconductor device and method of fabricating the same (2025-08-12),
5. 12374621 - Semiconductor structure and method of manufacturing the same (2025-07-29),
6. 12363885 - Semiconductor memory device and method of fabricating the same (2025-07-15),
7. 12342536 - Semiconductor memory device having buried word line with a neck profile portion (2025-06-24),
8. 12274048 - Dynamic random access memory device (2025-04-08),
9. 12272594 - Semiconductor device and method of fabricating the same having a second active region disposed at an outer side of a first active region (2025-04-08),
10. 12225715 - Semiconductor device having semiconductor layers disposed between upper portions of the isolation structures and the active regions (2025-02-11),
11. 12224283 - Semiconductor memory device (2025-02-11),
12. 12200923 - Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrate (2025-01-14),
13. 12150291 - Semiconductor memory device (2024-11-19),
14. 12133373 - Semiconductor structure including capacitor and method for forming the same (2024-10-29),
15. 12114487 - Semiconductor memory device having bit lines and isolation fins disposed on the substrate (2024-10-08),

Title: The Innovative Journey of Janbo Zhang

Introduction: Janbo Zhang, a pioneering inventor hailing from Zhangzhou, China, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Zhang's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and storage solutions.

Career Highlights: With a career spanning over two decades, Janbo Zhang has worked tirelessly to develop cutting-edge solutions in the renewable energy sector. His work has led to several patents that have revolutionized the industry.

Collaborations: Zhang has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation in the field.

Conclusion: Janbo Zhang's dedication to innovation and his passion for creating a sustainable future have solidified his position as a trailblazer in the world of renewable energy technology. His work continues to inspire and drive progress in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…