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Janbo Zhang

This inventor holds 30 USPTO granted patents and 28 published patent applications. Top assignee: Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2022-2025.

USPTO Granted Patents = 30 (Patent Applications = 28)

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 5(Granted Patents)

Location History:

Quanzhou, CN (2023)
Zhangzhou, CN (2022 - 2024)

Company Filing History:

30 out of 354

Fujian Jinhua Integrated Circuit Co., Ltd.

patents

Years Active: 2022-2025

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Areas of Expertise:

Semiconductor Device

Semiconductor Memory Device

Dynamic Random Access Memory

Dielectric Insert Structure

Capacitor Structure

Bit Line Configuration

Isolation Structures

Active Region Design

Fabrication Methods

Substrate Engineering

Neck Profile Portion

Manufacturing Techniques

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12513891 - Semiconductor device and method of fabricating the same (2025-12-30),

2. 12477753 - Semiconductor device and fabricating method thereof (2025-11-18),

3. 12477722 - Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate (2025-11-18),

4. 12394714 - Semiconductor device including dielectric insert structure directly under buried word line and method for forming the same (2025-08-19),

5. 12389617 - Semiconductor device and method of fabricating the same (2025-08-12),

6. 12374621 - Semiconductor structure and method of manufacturing the same (2025-07-29),

7. 12363885 - Semiconductor memory device and method of fabricating the same (2025-07-15),

8. 12342536 - Semiconductor memory device having buried word line with a neck profile portion (2025-06-24),

9. 12274048 - Dynamic random access memory device (2025-04-08),

10. 12272594 - Semiconductor device and method of fabricating the same having a second active region disposed at an outer side of a first active region (2025-04-08),

11. 12225715 - Semiconductor device having semiconductor layers disposed between upper portions of the isolation structures and the active regions (2025-02-11),

12. 12224283 - Semiconductor memory device (2025-02-11),

13. 12200923 - Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrate (2025-01-14),

14. 12150291 - Semiconductor memory device (2024-11-19),

15. 12133373 - Semiconductor structure including capacitor and method for forming the same (2024-10-29),

Title: The Innovative Journey of Janbo Zhang

Introduction: Janbo Zhang, a pioneering inventor hailing from Zhangzhou, China, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Zhang's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and storage solutions.

Career Highlights: With a career spanning over two decades, Janbo Zhang has worked tirelessly to develop cutting-edge solutions in the renewable energy sector. His work has led to several patents that have revolutionized the industry.

Collaborations: Zhang has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation in the field.

Conclusion: Janbo Zhang's dedication to innovation and his passion for creating a sustainable future have solidified his position as a trailblazer in the world of renewable energy technology. His work continues to inspire and drive progress in the industry.

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