The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Oct. 03, 2023
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Yu-Cheng Tung, Quanzhou, CN;
Janbo Zhang, Quanzhou, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A method for forming a semiconductor structure includes providing a substrate, forming an upper sacrificial layer, an upper supporting layer and a hard mask layer on the substrate, forming bottom electrodes through the upper sacrificial layer, the upper supporting layer and the hard mask layer, forming at least an opening between the bottom electrodes and through the hard mask layer and the upper supporting layer to partially expose the upper sacrificial layer. A portion of at least one of the bottom electrodes exposed from the opening has a slope profile, and a lower end of the slope profile is not lower than a lower surface of the upper supporting layer. The method further includes removing the upper sacrificial layer from the opening to form a cavity, and forming a capacitor dielectric layer along the bottom electrodes and a conductive material filling the cavity.