The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Nov. 01, 2022
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian, CN;
Guoguo Kong, Quanzhou, CN;
Meng Qi Zhuang, Quanzhou, CN;
Yun-Fan Chou, Quanzhou, CN;
Yu-Cheng Tung, Quanzhou, CN;
Shi-Wei He, Quanzhou, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
The present disclosure provides a three-dimensional memory device and a method of fabricating the same, which includes a substrate, and a memory stack structure. The memory stack structure is disposed on the substrate, and includes a plurality of stack units sequentially stacked into a staircase shape, wherein each of the stack units has a stepped slope, the stepped slope of any one of the stack units disposed in a related lower position is less than the stepped slope of another one of the stack units disposed over the one of the stack units. Through this arrangements, the three-dimensional memory device may therefore obtain an optimized structural integrity, as well as improved component efficiency.