Fujian, China

Shi-Wei He

USPTO Granted Patents = 4 

Average Co-Inventor Count = 5.4

ph-index = 1


Location History:

  • Fujian, CN (2021)
  • Nan'an, CN (2023)

Company Filing History:


Years Active: 2021-2025

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4 patents (USPTO):Explore Patents

Title: Shi-Wei He: Innovator in Semiconductor Technology

Introduction

Shi-Wei He is a prominent inventor based in Fujian, China. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing memory devices and improving fabrication methods.

Latest Patents

One of his latest patents is a three-dimensional memory device. This device features a staircase structure that includes steps made up of conductive layers and dielectric layers. The design incorporates a recess in the conductive layer, which exposes part of the dielectric layer's bottom surface. Another notable patent is related to a method of fabricating a semiconductor device that includes a void in the bit line contact plug. This innovation allows bit line contact plugs to maintain good electrical transmission with active areas, even when internal voids are present. The method enhances memory fabrication throughput, making the process easier and faster.

Career Highlights

Shi-Wei He is currently associated with Fujian Jinhua Integrated Circuit Co., Ltd. His work at this company has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the development of more efficient memory devices.

Collaborations

He has collaborated with notable coworkers, including Yun-Fan Chou and Te-Hao Huang. Their combined expertise has fostered a productive environment for innovation in semiconductor research.

Conclusion

Shi-Wei He is a key figure in the semiconductor industry, with a focus on memory devices and fabrication methods. His contributions continue to shape the future of technology in this field.

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