Fujian Jinhua Integrated Circuit Co., Ltd.

Shi-Wei He

Yun-Fan Chou

Hsien-Shih Chu

Feng-Ming Huang

Te-Hao Huang

Guoguo Kong

Yu-Cheng Tung

Gang Wu

Canfa Dai

Meng Qi Zhuang

Dongxiang Zhu

Jianxiong Lai

The present disclosure provides a three-dimensional memory device and a method of fabricating the same, which includes a substrate, and a memory stack structure. The memory stack structure is disposed on the substrate, and includes a plurality of stack units sequentially stacked into a staircase shape, wherein each of the stack units has a stepped slope, the stepped slope of any one of the stack units disposed in a related lower position is less than the stepped slope of another one of the stack units disposed over the one of the stack units. Through this arrangements, the three-dimensional memory device may therefore obtain an optimized structural integrity, as well as improved component efficiency.

Three-dimensional memory device and method for fabricating the same

A three-dimensional memory device includes a staircase structure comprising steps respectively comprising a conductive layers and a dielectric layer. A sidewall of the conductive layer is recessed from a sidewall of the dielectric layer to form a recess that exposes a portion of a bottom surface of the dielectric layer.

Three-dimensional memory device

A semiconductor device, a method of fabricating the semiconductor device and a memory are disclosed. In the provided semiconductor device, bit line contact plugs partially reside on insulating material layers in gate trenches in active areas and thus can come into sufficient contact with the active areas. This ensures good electrical transmission between the bit line contact plugs and the active areas even when there are internal voids in the bit line contact plugs. Such bit line contact plugs allowed to contain internal voids can be fabricated in an easier and faster manner, thus allowing a significantly enhanced memory fabrication throughput.

Method of fabricating semiconductor device having void in bit line contact plug

Semiconductor device having void in bit line contact plug

Growing community of inventors

Fujian, China

Shi-Wei He