The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Dec. 11, 2019
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian, CN;
Shi-Wei He, Fujian, CN;
Te-Hao Huang, Fujian, CN;
Hsien-Shih Chu, Fujian, CN;
Yun-Fan Chou, Fujian, CN;
Feng-Ming Huang, Fujian, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A semiconductor device, a method of fabricating the semiconductor device and a memory are disclosed. In the provided semiconductor device, bit line contact plugs partially reside on insulating material layers in gate trenches in active areas and thus can come into sufficient contact with the active areas. This ensures good electrical transmission between the bit line contact plugs and the active areas even when there are internal voids in the bit line contact plugs. Such bit line contact plugs allowed to contain internal voids can be fabricated in an easier and faster manner, thus allowing a significantly enhanced memory fabrication throughput.