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For the Inventor, By the Inventor

Tainan, Taiwan

Shih-Fang Tzou

This inventor holds 78 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd., Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Fang Tzou. Retrieved from https://idiyas.com/inventor/shih-fang-tzou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 78 

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 7

Forward Citations = 205(Granted Patents)

Forward Citations (Not Self Cited) = 195(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu Hsien, TW (2009)
  • Jhudong Township, Hsinchu County, TW (2012)
  • Hsinchu County, TW (2012 - 2015)
  • Hsinchu, TW (2009 - 2017)
  • Tainan, TW (2015 - 2024)

Company Filing History:

goldMedal78 out of 7,288 
 
United Microelectronics Corp.
 patents
silverMedal44 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
bronzeMedal1 out of 28 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2009-2026

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Areas of Expertise:
Semiconductor Memory Device
Capacitor Structure
DRAM Cell
Memory Device Formation
Row Hammering Prevention
Buried Word Line
Contact Hole Fabrication
Oxide Layer Formation
Amorphous Silicon Structure
Semiconductor Structure
Bit Line Contact Structure
Layout Definition
78 patents (USPTO):Explore Patents
1. 12652797 - Method of forming semiconductor memory device (2026-06-09),
2. 12349340 - Method of forming semiconductor memory device (2025-07-01),
3. 12272646 - Semiconductor memory device (2025-04-08),
4. 12058851 - Method of forming semiconductor memory device (2024-08-06),
5. 11800702 - Method of forming a memory device (2023-10-24),
6. 11770924 - Semiconductor device (2023-09-26),
7. 11769727 - Semiconductor memory device (2023-09-26),
8. 11765881 - Semiconductor structure with capacitor landing pad and method of making the same (2023-09-19),
9. 11711916 - Method of forming semiconductor memory device (2023-07-25),
10. 11631679 - Semiconductor device (2023-04-18),
11. 11563012 - Semiconductor structure with capacitor landing pad and method of making the same (2023-01-24),
12. 11393826 - Semiconductor device and method of forming the same (2022-07-19),
13. 11239243 - Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same (2022-02-01),
14. 11139243 - Semiconductor memory device (2021-10-05),
15. 11049863 - Semiconductor structure with capacitor landing pad and method of making the same (2021-06-29),

Title: The Innovative Journey of Inventor Shih-Fang Tzou

Introduction: Shih-Fang Tzou, a talented inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Shih-Fang Tzou's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar-powered devices that are both efficient and sustainable.

Career Highlights: With a career spanning over two decades, Shih-Fang Tzou has established himself as a leading figure in the tech industry, known for his out-of-the-box thinking and ability to turn ideas into reality. His work has been recognized globally, earning him several prestigious awards.

Collaborations: Throughout his career, Shih-Fang Tzou has collaborated with various research institutions and tech companies to further his innovative projects. His ability to work in multidisciplinary teams has led to the successful implementation of cutting-edge technologies.

Conclusion: In conclusion, Shih-Fang Tzou's passion for innovation and his dedication to creating a sustainable future through technology make him a true pioneer in the field of inventions. His work continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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