The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
May. 05, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Chih-Chieh Tsai, Kaohsiung, TW;
Pin-Hong Chen, Tainan, TW;
Tzu-Chieh Chen, Pingtung County, TW;
Tsun-Min Cheng, Changhua County, TW;
Yi-Wei Chen, Taichung, TW;
Hsin-Fu Huang, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Shih-Fang Tzou, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A method of manufacturing a semiconductor device for preventing row hammering issue in DRAM cell, including the steps of providing a substrate, forming a trench in the substrate, forming a gate dielectric conformally on the trench, forming an n-type work function metal layer conformally on the substrate and the gate dielectric, forming a titanium nitride layer conformally on the n-type work function metal layer, and filling a buried word line in the trench.