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Hsin-Fu Huang

USPTO Granted Patents = 41 (Patent Applications = 11)

Average Co-Inventor Count = 7.0

ph-index = 5

Forward Citations = 81(Granted Patents)

Location History:

Tainan, TW (2013 - 2024)
Taichung, TW (2024)

Company Filing History:

41 out of 7,087

United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

where one patent can have more than one assignee

Years Active: 2013-2025

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Areas of Expertise:

Semiconductor Device

High Electron Mobility Transistor

Thin Film Resistor

ReRAM Structure

DRAM Cell

Conductive Structure

Metal Gate Structure

Transistor

MOS Transistor

Gate Stack Structure

Interconnection Structure

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12389807 - Semiconductor device and method for fabricating the same (2025-08-12),

2. 12279536 - Semiconductor device and method for fabricating the same (2025-04-14),

3. 12237395 - High electron mobility transistor and method for forming the same (2025-02-25),

4. 12211888 - Method for forming a thin film resistor with improved thermal stability (2025-01-28),

5. 11968906 - Semiconductor device and method for fabricating the same (2024-04-23),

6. 11877433 - Storage node contact structure of a memory device (2024-01-16),

7. 11424408 - ReRAM structure and method of fabricating the same (2022-08-23),

8. 11239243 - Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same (2022-02-01),

9. 11165019 - ReRAM structure and method of fabricating the same (2021-11-02),

10. 10756090 - Storage node contact structure of a memory device and manufacturing methods thereof (2020-08-25),

11. 10685964 - Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same (2020-06-16),

12. 10497617 - Conductive structure and method for manufacturing conductive structure (2019-12-03),

13. 10199269 - Conductive structure and method for manufacturing conductive structure (2019-02-05),

14. 10199228 - Manufacturing method of metal gate structure (2019-02-05),

15. 10068797 - Semiconductor process for forming plug (2018-09-04),

Title: The Innovative Journey of Hsin-Fu Huang

Introduction: Hsin-Fu Huang, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Hsin-Fu Huang's latest patents include a cutting-edge smart home automation system that integrates artificial intelligence for enhanced efficiency and convenience.

Career Highlights: With a career spanning over two decades, Hsin-Fu Huang has established himself as a visionary inventor known for his ability to transform complex technological concepts into practical solutions. His work has been recognized globally for its innovation and impact.

Collaborations: Throughout his career, Hsin-Fu Huang has collaborated with leading tech companies and research institutions to further develop and refine his inventions. His collaborative spirit has led to the creation of cutting-edge technologies that have revolutionized various industries.

Conclusion: In conclusion, Hsin-Fu Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a prominent inventor in the global innovation landscape. His contributions continue to inspire future generations of inventors and shape the technological advancements of tomorrow.

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