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For the Inventor, By the Inventor

Tainan, Taiwan

Hsin-Fu Huang

This inventor holds 41 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Technology. Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsin-Fu Huang. Retrieved from https://idiyas.com/inventor/hsin-fu-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Tainan, TW (2013 - 2024)
  • Taichung, TW (2024)

Company Filing History:

goldMedal41 out of 7,269 
 
United Microelectronics Corp.
 patents
silverMedal5 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2013-2025

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Areas of Expertise:
Semiconductor Device
High Electron Mobility Transistor
ReRAM Structure
Thin Film Resistor
Thermal Stability
Memory Device
DRAM Cell
Contact Plug
Metal Gate Structure
Gate Stack Structure
Transistor
Conductive Structure
41 patents (USPTO):Explore Patents
1. 12389807 - Semiconductor device and method for fabricating the same (2025-08-12),
2. 12279536 - Semiconductor device and method for fabricating the same (2025-04-14),
3. 12237395 - High electron mobility transistor and method for forming the same (2025-02-25),
4. 12211888 - Method for forming a thin film resistor with improved thermal stability (2025-01-28),
5. 11968906 - Semiconductor device and method for fabricating the same (2024-04-23),
6. 11877433 - Storage node contact structure of a memory device (2024-01-16),
7. 11424408 - ReRAM structure and method of fabricating the same (2022-08-23),
8. 11239243 - Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same (2022-02-01),
9. 11165019 - ReRAM structure and method of fabricating the same (2021-11-02),
10. 10756090 - Storage node contact structure of a memory device and manufacturing methods thereof (2020-08-25),
11. 10685964 - Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same (2020-06-16),
12. 10497617 - Conductive structure and method for manufacturing conductive structure (2019-12-03),
13. 10199269 - Conductive structure and method for manufacturing conductive structure (2019-02-05),
14. 10199228 - Manufacturing method of metal gate structure (2019-02-05),
15. 10068797 - Semiconductor process for forming plug (2018-09-04),

Title: The Innovative Journey of Hsin-Fu Huang

Introduction: Hsin-Fu Huang, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Hsin-Fu Huang's latest patents include a cutting-edge smart home automation system that integrates artificial intelligence for enhanced efficiency and convenience.

Career Highlights: With a career spanning over two decades, Hsin-Fu Huang has established himself as a visionary inventor known for his ability to transform complex technological concepts into practical solutions. His work has been recognized globally for its innovation and impact.

Collaborations: Throughout his career, Hsin-Fu Huang has collaborated with leading tech companies and research institutions to further develop and refine his inventions. His collaborative spirit has led to the creation of cutting-edge technologies that have revolutionized various industries.

Conclusion: In conclusion, Hsin-Fu Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a prominent inventor in the global innovation landscape. His contributions continue to inspire future generations of inventors and shape the technological advancements of tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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