The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Mar. 18, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jin-Yan Chiou, Tainan, TW;
Wei-Chuan Tsai, Changhua County, TW;
Hsin-Fu Huang, Tainan, TW;
Yen-Tsai Yi, Tainan, TW;
Hsiang-Wen Ke, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2022.12); G11C 11/16 (2005.12); H10N 50/01 (2022.12); H10N 50/85 (2022.12); H01F 10/32 (2005.12); H01F 41/32 (2005.12);
U.S. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/161 (2012.12); H10N 50/01 (2023.01); H10N 50/85 (2023.01); H01F 10/3254 (2012.12); H01F 41/32 (2012.12);
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.