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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12237395 B1

PDFFull Text
Date of Patent:
Feb. 25, 2025

Filed:

Feb. 20, 2022

High electron mobility transistor and method for forming the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ko-Wei Lin, Taichung, TW;

Chun-Chieh Chiu, Keelung, TW;

Chun-Ling Lin, Tainan, TW;

Shu Min Huang, Tainan, TW;

Hsin-Fu Huang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Shahed Ahmed

Assistant Examiner:

Rhys Poniente Sheker

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 21/3245 (2013.01); H01L 21/76841 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract

A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

Find Patent Forward Citations

Lin, Ko-Wei. (2025). High electron mobility transistor and method for forming the same (U.S. Patent No. 12237395). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12237395

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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