Shu Min Huang

Title: Innovations of Shu Min Huang

Introduction

Shu Min Huang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on advanced electronic components that enhance the performance and efficiency of various devices.

Latest Patents

Among his latest patents is the development of a high electron mobility transistor (HEMT). This innovative transistor includes a substrate, a channel layer, a barrier layer, and a passivation layer. A contact structure is integrated into the design, which extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure features a metal layer that is doped with a first additive, with a weight percentage of the first additive in the metal layer ranging between 0% and 2%. Another notable patent involves a semiconductor process for forming a plug. This process includes forming a dielectric layer with a recess on a substrate, followed by the conformal application of a titanium layer. A first titanium nitride layer is then formed, and the sidewall parts are adjusted to create a second titanium nitride layer that covers the recess.

Career Highlights

Shu Min Huang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to push the boundaries of technology and contribute to the advancement of electronic components.

Collaborations

He has collaborated with notable coworkers, including Kuo-Chih Lai and Chia Chang Hsu, to further enhance the innovations in semiconductor technology.

Conclusion

Shu Min Huang's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the development of advanced electronic components, showcasing the importance of innovation in technology.