The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jun. 10, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kuo-Chih Lai, Tainan, TW;
Nien-Ting Ho, Tainan, TW;
Shu Min Huang, Tainan, TW;
Bor-Shyang Liao, Kaohsiung, TW;
Chia Chang Hsu, Kaohsiung, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/28518 (2013.01); H01L 21/02068 (2013.01); H01L 29/665 (2013.01); H01L 21/28052 (2013.01);
Abstract
A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.