The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Apr. 26, 2012
Kuo-chih Lai, Tainan, TW;
Chia Chang Hsu, Kaohsiung, TW;
Nien-ting Ho, Tainan, TW;
Bor-shyang Liao, Kaohsiung, TW;
Shu Min Huang, Tainan, TW;
Min-chung Cheng, Chiayi County, TW;
Yu-ru Yang, Hsinchu County, TW;
Kuo-Chih Lai, Tainan, TW;
Chia Chang Hsu, Kaohsiung, TW;
Nien-Ting Ho, Tainan, TW;
Bor-Shyang Liao, Kaohsiung, TW;
Shu Min Huang, Tainan, TW;
Min-Chung Cheng, Chiayi County, TW;
Yu-Ru Yang, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.