The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Oct. 07, 2012
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Chih Lai, Tainan, TW;
Chia Chang Hsu, Kaohsiung, TW;
Bor-Shyang Liao, Kaohsiung, TW;
Chun-Ling Lin, Tainan, TW;
Shu Min Huang, Tainan, TW;
Min-Chung Cheng, Chiayi County, TW;
Chi-Mao Hsu, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a method for forming a salicide layer. First, a metal-atom-containing layer is formed on a substrate, a first rapid thermal process (RTP) is then performed to the metal-atom-containing layer to form a transitional salicide layer on a specific region. The metal-atom-containing layer is then removed, a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer.