The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jan. 27, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Chih Lai, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Shih-Min Chou, Tainan, TW;
Nien-Ting Ho, Tainan, TW;
Wei-Ming Hsiao, Tainan, TW;
Li-Han Chen, Tainan, TW;
Szu-Yao Yu, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.