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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10497617 B1

PDFFull Text
Date of Patent:
Dec. 03, 2019

Filed:

Dec. 19, 2018

Conductive structure and method for manufacturing conductive structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Li-Han Chen, Tainan, TW;

Yen-Tsai Yi, Tainan, TW;

Chun-Chieh Chiu, Keelung, TW;

Min-Chuan Tsai, New Taipei, TW;

Wei-Chuan Tsai, Changhua County, TW;

Hsin-Fu Huang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/78 (2006.01); H01L 23/485 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76889 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76858 (2013.01); H01L 21/76876 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/41783 (2013.01); H01L 29/665 (2013.01); H01L 29/7848 (2013.01); H01L 21/28518 (2013.01); H01L 21/76855 (2013.01);
Abstract

A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.

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