The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Mar. 15, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Pin-Hong Chen, Tainan, TW;
Tsun-Min Cheng, Changhua County, TW;
Chih-Chieh Tsai, Kaohsiung, TW;
Tzu-Chieh Chen, Pingtung County, TW;
Kai-Jiun Chang, Taoyuan, TW;
Chia-Chen Wu, Nantou County, TW;
Yi-An Huang, New Taipei, TW;
Yi-Wei Chen, Taichung, TW;
Hsin-Fu Huang, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Li-Wei Feng, Kaohsiung, TW;
Ying-Chiao Wang, Changhua County, TW;
Chung-Yen Feng, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).