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For the Inventor, By the Inventor

Taoyuan, Taiwan

Kai-Jiun Chang

This inventor holds 25 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Memory. Top assignees: United Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai-Jiun Chang. Retrieved from https://idiyas.com/inventor/kai-jiun-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 6.1

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:

goldMedal25 out of 7,298 
 
United Microelectronics Corp.
 patents
silverMedal20 out of 354 
 
Fujian Jinhua Integrated Circuit Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2017-2026

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Areas of Expertise:
Resistive Random Access Memory
Dynamic Random Access Memory
Fabrication Method
Semiconductor Device
Memory Structure
Cobalt Silicide
Storage Node Contact
Memory Device
25 patents (USPTO):Explore Patents
1. 12740338 - Resistive random access memory device and fabrication method thereof (2026-09-15),
2. 12707900 - Resistive random access memory device and method for fabricating the same (2026-08-11),
3. 12641797 - RRAM structure and method of fabricating the same (2026-05-26),
4. 12575340 - Resistive switching device and fabrication method thereof (2026-03-10),
5. 12520737 - RRAM structure and method of fabricating the same (2026-01-06),
6. 12075613 - Buried word line of a dynamic random access memory and method for fabricating the same (2024-08-27),
7. 11877433 - Storage node contact structure of a memory device (2024-01-16),
8. 11799012 - Semiconductor device and method for fabricating the same (2023-10-24),
9. 11251187 - Buried word line of a dynamic random access memory and method for fabricating the same (2022-02-15),
10. 11222784 - Semiconductor device and method for fabricating the same (2022-01-11),
11. 11088023 - Method of forming a semiconductor structure (2021-08-10),
12. 10804365 - Semiconductor device and method for fabricating the same (2020-10-13),
13. 10756090 - Storage node contact structure of a memory device and manufacturing methods thereof (2020-08-25),
14. 10707214 - Fabricating method of cobalt silicide layer coupled to contact plug (2020-07-07),
15. 10651040 - Semiconductor device and method for fabricating the same (2020-05-12),

Title: The Innovative Journey of Inventor Kai-Jiun Chang

Introduction: Kai-Jiun Chang, a talented inventor hailing from Taoyuan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Kai-Jiun Chang's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, and a unique wearable device that monitors health metrics in real-time.

Career Highlights: With a career spanning over two decades, Kai-Jiun Chang has established himself as a pioneer in the tech industry. He has worked with leading companies to develop state-of-the-art products and has been recognized with multiple awards for his innovative solutions.

Collaborations: Throughout his career, Kai-Jiun Chang has collaborated with top research institutions and universities to push the boundaries of technology. His partnerships have led to the development of cutting-edge products that have improved the lives of many.

Conclusion: In conclusion, Kai-Jiun Chang's passion for innovation and his dedication to pushing the limits of technology have solidified his position as a respected inventor in the industry. His relentless pursuit of excellence continues to inspire the next generation of inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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