The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
May. 22, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Tzu-Hao Liu, Taichung, TW;
Yi-Wei Chen, Taichung, TW;
Tsun-Min Cheng, Changhua County, TW;
Kai-Jiun Chang, Taoyuan, TW;
Chia-Chen Wu, Nantou County, TW;
Yi-An Huang, New Taipei, TW;
Po-Chih Wu, Tainan, TW;
Pin-Hong Chen, Tainan, TW;
Chun-Chieh Chiu, Keelung, TW;
Tzu-Chieh Chen, Pingtung County, TW;
Chih-Chien Liu, Taipei, TW;
Chih-Chieh Tsai, Kaohsiung, TW;
Ji-Min Lin, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.