The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 16, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 63/00 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/8833 (2023.02);
Abstract
A resistive random access memory device includes a substrate; a dielectric layer disposed on the substrate; a conductive via disposed in the dielectric layer; a metal nitride layer disposed on the conductive via, wherein the metal nitride has a gradient nitrogen concentration along a thickness direction of the metal nitride layer; a resistive switching layer disposed on the metal nitride layer; and a metal oxynitride layer disposed on the resistive switching layer, wherein the metal oxynitride layer has a gradient nitrogen concentration along a thickness direction of the metal oxynitride layer.