The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Mar. 27, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Tzu-Hao Liu, Taichung, TW;
Yi-Wei Chen, Taichung, TW;
Tsun-Min Cheng, Changhua County, TW;
Kai-Jiun Chang, Taoyuan, TW;
Chia-Chen Wu, Nantou County, TW;
Yi-An Huang, New Taipei, TW;
Po-Chih Wu, Tainan, TW;
Pin-Hong Chen, Tainan, TW;
Chun-Chieh Chiu, Keelung, TW;
Tzu-Chieh Chen, Pingtung County, TW;
Chih-Chien Liu, Taipei, TW;
Chih-Chieh Tsai, Kaohsiung, TW;
Ji-Min Lin, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.