The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Jul. 05, 2018
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Inventors:

Chih-Chieh Tsai, Kaohsiung, TW;

Pin-Hong Chen, Tainan, TW;

Tzu-Chieh Chen, Pingtung County, TW;

Tsun-Min Cheng, Changhua County, TW;

Yi-Wei Chen, Taichung, TW;

Hsin-Fu Huang, Tainan, TW;

Chi-Mao Hsu, Tainan, TW;

Shih-Fang Tzou, Tainan, TW;

Assignees:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10891 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor structure for preventing row hammering issue in DRAM cell is provided in the present invention. The structure includes a trench with a gate dielectric, an n-type work function metal layer, a TiN layer conformally formed within, and a buried word line filled in the trench.


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