The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Sep. 20, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Min Chou, Tainan, TW;
Kuo-Chih Lai, Tainan, TW;
Wei-Ming Hsiao, Tainan, TW;
Hui-Ting Lin, Chiayi County, TW;
Szu-Yao Yu, Tainan, TW;
Nien-Ting Ho, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An ReRAM structure includes a dielectric layer. A first ReRAM and a second ReRAM are disposed on the dielectric layer. The second ReRAM is at one side of the first ReRAM. A trench is disposed in the dielectric layer between the first ReRAM and the second ReRAM. The first ReRAM includes a bottom electrode, a variable resistive layer and a top electrode. The variable resistive layer is between the bottom electrode and the top electrode. A width of the bottom electrode is smaller than a width of the top electrode. The width of the bottom electrode is smaller than a width of the variable resistive layer.